VT60L45PW www.vishay.com vishay general semiconductor revision: 08-jan-14 1 document number: 87778 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.24 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-3pw ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? primary characteristics i f(av) 2 x 30 a v rrm 45 v i fsm 400 a v f at i f = 30 a (t a = 125 c) 0.41 v t j max. 150 c package to-3pw diode variations dual common cathode to-3pw tmbs ? pin 2 case pin 1 pin 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VT60L45PW unit maximum repetitive pe ak reverse voltage v rrm 45 v maximum average forward rectified current (fig. 1) per device i f(av) 60 a per diode 30 peak forward surge current 8. 3 ms single ha lf sine-wave ? superimposed on ra ted load per diode i fsm 400 a operating junction and storage temperature range t j , t stg -40 to +150 c
VT60L45PW www.vishay.com vishay general semiconductor revision: 08-jan-14 2 document number: 87778 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 5 ms ? notes (1) the heat generated must be less than the thermal conductivity from junction-to-ambient: dp d /dt j < 1/r ? ja (2) free air, without heatsink ? ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.37 - v i f = 15 a 0.43 - i f = 30 a 0.49 0.57 i f = 5 a t a = 125 c 0.24 - i f = 15 a 0.32 - i f = 30 a 0.41 0.50 reverse current per diode v r = 45 v t a = 25 c i r (2) -7ma t a = 125 c 67 180 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VT60L45PW unit typical thermal resistance per diode r ? jc 0.9 c/w per device 0.6 per device r ? ja (1)(2) 48 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-3pw VT60L45PW-m3/4w 4.5 4w 30/tube tube 0 255075100125150 average forward rectified current (a) ca s e temperature (c) 0 10 20 30 40 50 60 70 rth ja = rth jc = 0.6 c/w rth ja = 48 c/w 0 2 4 6 8 10 12 14 16 0 4 8 12162024283236 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 d = t p /t t p t
VT60L45PW www.vishay.com vishay general semiconductor revision: 08-jan-14 3 document number: 87778 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.01 0.1 1 10 100 1000 20 40 60 80 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 100 c t a = 25 c 100 1000 10 000 0.1 1 10 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.1 1 0.01 0.1 1 10 100 tran s ient thermal impedance ( c/w) t - pul s e duration ( s ) junction to ca s e to- 3 pw 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 0.245 (6.23) 0.225 (5.72) 0.840 (21.34) 0.820 (20.83) 0.170 (4.32) ? 0.146 (3.71) ? 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.044 (1.12) 0.225 (5.72) 0.205 (5.21) 0.565 (14.35) 0.545 (13.84) 0.160 (4.06) 0.140 (3.56) 0.551 (14.00) 0.537 (13.64) 0.077 (1.96) 0.063 (1.60) 0.079 (2.01) 0.065 (1.65) 0.467 (11.86) 0.453 (11.51) 5 ref. both s ide s r0.155 (r3.94) r0.145 (r3.68) 3 ref. 30 ref. 10 typ. both s ide s 3 ref. 3 ref. 0.050 (1.27) 0.175 (4.45) 0.165 (4.19) 0.030 (0.75) 0.020 (0.50) 0.098 (2.50) 0.083 (2.12)
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